標題: Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics
作者: Lin, Cheng-I
Khan, Asif Islam
Salahuddin, Sayeef
Hu, Chenming
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ferroelectric;negative capacitance FET (NCFET);sub-60 mV/decade
公開日期: 五月-2016
摘要: We study the effects of the variation of ferroelectric material properties (thickness, polarization, and coercivity) on the performance of negative capacitance FETs (NCFETs). Based on this, we propose the concept of conservative design of NCFETs, where any unintentional yet reasonable and simultaneous variation (similar to +/- 3%) in ferroelectric parameters does not result in the emergence of hysteresis and causes only a reasonable variation in the ON-current (<= 5%) and, within these constraints, the enhancement of ON-current due to the addition of the ferroelectric gate oxide, which is is maximized.
URI: http://dx.doi.org/10.1109/TED.2016.2514783
http://hdl.handle.net/11536/133640
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2514783
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
Issue: 5
起始頁: 2197
結束頁: 2199
顯示於類別:期刊論文