完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Cheng-I | en_US |
dc.contributor.author | Khan, Asif Islam | en_US |
dc.contributor.author | Salahuddin, Sayeef | en_US |
dc.contributor.author | Hu, Chenming | en_US |
dc.date.accessioned | 2017-04-21T06:55:35Z | - |
dc.date.available | 2017-04-21T06:55:35Z | - |
dc.date.issued | 2016-05 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2016.2514783 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/133640 | - |
dc.description.abstract | We study the effects of the variation of ferroelectric material properties (thickness, polarization, and coercivity) on the performance of negative capacitance FETs (NCFETs). Based on this, we propose the concept of conservative design of NCFETs, where any unintentional yet reasonable and simultaneous variation (similar to +/- 3%) in ferroelectric parameters does not result in the emergence of hysteresis and causes only a reasonable variation in the ON-current (<= 5%) and, within these constraints, the enhancement of ON-current due to the addition of the ferroelectric gate oxide, which is is maximized. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Ferroelectric | en_US |
dc.subject | negative capacitance FET (NCFET) | en_US |
dc.subject | sub-60 mV/decade | en_US |
dc.title | Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics | en_US |
dc.identifier.doi | 10.1109/TED.2016.2514783 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 63 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 2197 | en_US |
dc.citation.epage | 2199 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000375004500059 | en_US |
顯示於類別: | 期刊論文 |