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dc.contributor.authorZhao, Hao-Yien_US
dc.contributor.authorNaseemen_US
dc.contributor.authorJones, Andrew H.en_US
dc.contributor.authorChao, Rui-Linen_US
dc.contributor.authorAhmad, Zohauddinen_US
dc.contributor.authorCampbell, Joe C.en_US
dc.contributor.authorShi, Jin-Weien_US
dc.date.accessioned2020-03-02T03:23:20Z-
dc.date.available2020-03-02T03:23:20Z-
dc.date.issued2019-12-01en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2019.2944098en_US
dc.identifier.urihttp://hdl.handle.net/11536/153693-
dc.description.abstractIn this work, we demonstrate a novel top-illuminated avalanche photodiode (APD) with high-speed and wide dynamic range performance for coherent lidar applications, which needs simultaneous processing of weak light reflections from the object and a strong optical local-oscillator (LO) signal at the receiving end. By taking advantage of a partially depleted p-type In0.53Ga0.47As absorbing layer and a thin In0.52Al0.48 As multiplication layer (88 nm), the demonstrated APDs exhibit a wide optical-to-electrical bandwidth (16 GHz) and high responsivity (2.5 A/W at 0.9 V-br) near the saturation output current which is as high as >8 mA. Furthermore, the measured low excess noise (k = 0.14) characteristics of this device ensure its wide dynamic range performance. In addition, it should be noted that the measured nonlinear behaviors of these APDs are quite different from those of typical fast p-i-n photodiodes (PDs), which always show serious degradation in their O-E bandwidths at their saturation output. On the other hand, the measured bias dependent 3-dB O-E bandwidth of the demonstrated APDs can be pinned at 16 GHz without any degradation at around the saturation current output. Such distinct nonlinear APD behaviors can be attributed to the space-charge-screening effect induced gain reduction under high-power operation.en_US
dc.language.isoen_USen_US
dc.subjectAvalanche photodiodeen_US
dc.subjectphotodiodeen_US
dc.titleHigh-Speed Avalanche Photodiodes With Wide Dynamic Range Performanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2019.2944098en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume37en_US
dc.citation.issue23en_US
dc.citation.spage5945en_US
dc.citation.epage5952en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000508233200023en_US
dc.citation.woscount0en_US
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