矽晶光偵測二極體設計、製作與元件特性分析

Abstract

在本篇論文中，我們介紹操作在0.85微米波長之矽晶光偵測二極體的設計、製作和元件特性分析。矽晶光偵測二極體是在高阻值的矽晶圓上利用磷離子、硼離子佈植的方式研製而成。經由I-V、 C-V、量子效率、崩潰電壓的量測及其對溫度、元件尺吋和製程的相依性，我們對其特性作分析。對於一直徑105微米，表面覆有抗反射層的矽晶光偵測二極體，在5伏逆向偏壓的操作下，其逆向電流為127 X 10-12 安培。電容值小於10-13法拉。崩潰電壓介於–140伏到–180伏之間。在0.85微米波長的光照射下，其響應在–5伏和–100伏的偏壓下分別為0.329 A/W和0.609 A/W。本論文也討論矽晶穿透崩潰型光偵測二極體的理論模型以便了解穿透崩潰型光偵測二極體的崩潰電壓、雜訊和放大率。

In this thesis, we present design, fabrication, and device characterization of 0.85 □m planar Si p-i-n photodiode. Our planar p-i-n photodiodes were fabricated on high resistivity float-zone grown Si substrates by P31 and B11 (or BF2 ) implantation and characterized by I-V, C-V, quantum efficiency, breakdown voltage measurements and their temperature, size and process dependence. For 105 □m diameter diode with AR coating and without poly-silicon gettering, the magnitude of reverse current is around 127 pA at –5 V bais. The capacitance is less than 0.1 pF. The breakdown voltages are in the range from 140 V to 180 V. At 0.85 □m wavelength, the responsivity is 0.329 A/W and 0.609 A/W at –5 V and –100 V bias respectively. We also present theoretical modeling of Si reach-through avalanche photodiode (RAPD) to study the interplay of RAPD’s breakdown voltage, noise, and multiplication.