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dc.contributor.authorHuang, Yen-Linen_US
dc.contributor.authorZheng, Luen_US
dc.contributor.authorChen, Pengen_US
dc.contributor.authorCheng, Xiaoxingen_US
dc.contributor.authorHsu, Shang-Linen_US
dc.contributor.authorYang, Tiannanen_US
dc.contributor.authorWu, Xiaoyuen_US
dc.contributor.authorPonet, Louisen_US
dc.contributor.authorRamesh, Ramamoorthyen_US
dc.contributor.authorChen, Long-Qingen_US
dc.contributor.authorArtyukhin, Sergeyen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorLai, Kejien_US
dc.date.accessioned2020-03-02T03:23:28Z-
dc.date.available2020-03-02T03:23:28Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://dx.doi.org/10.1002/adma.201905132en_US
dc.identifier.urihttp://hdl.handle.net/11536/153744-
dc.description.abstractNanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipolar oscillation is important. Herein, an unexpected giant GHz conductivity on the order of 10(3) S m(-1) is observed in certain BiFeO3 DWs, which is about 100 000 times greater than the carrier-induced direct current (dc) conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the alternating current (ac) conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for radio-frequency applications.en_US
dc.language.isoen_USen_US
dc.subjectac conductivityen_US
dc.subjectbismuth ferriteen_US
dc.subjectdomain wall nanoelectronicsen_US
dc.subjectmicrowave microscopyen_US
dc.titleUnexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wallen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adma.201905132en_US
dc.identifier.journalADVANCED MATERIALSen_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000508485100001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles