標題: Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer
作者: Wu, Chien-Hung
Kuo, Song-Nian
Chang, Kow-Ming
Chen, Yi-Ming
Zhang, Yu-Xin
Xu, Ni
Liu, Wu-Yang
Chin, Albert
電機學院
電子工程學系及電子研究所
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: RRAM;a-IGZO;AP-PECVD;Microwave Annealing
公開日期: 1-Jul-2020
摘要: Non-volatile memory (NVM) is essential in almost every consumer electronic products. The most prevalent NVM used nowadays is flash memory (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Res. Letters, 9(1), p.526). However, some bottlenecks of flash memory have been identified, such as high operation voltage, low operation speed, and poor retention time. Resistive random access memory (RRAM) is considered to be the most promising one to become the next generation NVM device since its simple structure, fast program/erase speed, and low power consumption. In this experiment, the RRAM device is fabricated, and its IGZO (memory) layer is deposited with AP-PECVD technique which can reduce cost of the process. Microwave annealing (MWA) is used to enhance electrical characteristics of the RRAM device (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). Experiment results show that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics under bipolar operation, all forming/set/reset voltage for RRAM device is simultaneously lowered.
URI: http://dx.doi.org/10.1166/jnn.2020.17561
http://hdl.handle.net/11536/153750
ISSN: 1533-4880
DOI: 10.1166/jnn.2020.17561
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 20
Issue: 7
起始頁: 4244
結束頁: 4247
Appears in Collections:Articles