標題: | Terahertz InP HBT Oscillators |
作者: | Rieh, Jae-Sung Yun, Jongwon Yoon, Daekeun Kim, Jungsoo Son, Heekang 國際半導體學院 International College of Semiconductor Technology |
關鍵字: | Submillimeter wave circuits;heterojunction bipolar transistors (HBT);oscillators |
公開日期: | 1-Jan-2018 |
摘要: | An overview of various high-frequency InP HBT oscillators that can be used as terahertz signal sources is presented. A 300-GHz fundamental-mode oscillator was first developed based on InP HBT technology, and then subsequently modified for additional oscillators with improved function or performance, which includes a 300-GHz voltage-controlled oscillator (VCO), a 280-GHz high-power oscillator with 10-dBm output, and a 600-GHz push-push oscillator. The 300-GHz oscillator was also successfully employed as a signal source for THz imaging, which is also briefly described. |
URI: | http://hdl.handle.net/11536/153854 |
ISBN: | 978-1-5386-5971-7 |
期刊: | 2018 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) |
起始頁: | 82 |
結束頁: | 84 |
Appears in Collections: | Conferences Paper |