標題: Molecular beam epitaxy preparation and in situ characterization of FeTe thin films
作者: Pereira, V. M.
Wu, C. N.
Liu, C. E.
Liao, S-S
Chang, C. F.
Kuo, C-Y
Koz, C.
Schwarz, U.
Lin, H-J
Chen, C. T.
Tjeng, L. H.
Altendorf, S. G.
電子物理學系
Department of Electrophysics
公開日期: 28-二月-2020
摘要: We have synthesized Fe1+y Te thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected from what is known from studies on the bulk material. Using x-ray magnetic circular dichroism spectroscopy at the Fe L-2(,3) and Te M-4(,5) edges, we observed that films with high excess Fe contain ferromagnetic clusters while films with lower excess Fe remain nonmagnetic. Moreover, x-ray absorption spectroscopy showed that it is possible to obtain films with very similar electronic structure as that of a high quality bulk single crystal Fe-1.(14) Te. Our results suggest that MBE with Te-limited growth may provide an opportunity to synthesize FeTe films with smaller amounts of excess Fe as to come closer to a possible superconducting phase.
URI: http://dx.doi.org/10.1103/PhysRevMaterials.4.023405
http://hdl.handle.net/11536/153955
ISSN: 2475-9953
DOI: 10.1103/PhysRevMaterials.4.023405
期刊: PHYSICAL REVIEW MATERIALS
Volume: 4
Issue: 2
起始頁: 0
結束頁: 0
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