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dc.contributor.authorHuang, Kuan Ningen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorLin, Jia-Chingen_US
dc.contributor.authorHsu, Chia Chiehen_US
dc.contributor.authorLee, Jin Hwaen_US
dc.contributor.authorWu, Chia-Hsunen_US
dc.contributor.authorYao, Jing Nengen_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorNagarajan, Venkatesanen_US
dc.contributor.authorKakushima, Kuniyukien_US
dc.contributor.authorTsutsui, Kazuoen_US
dc.contributor.authorIwai, Hiroshien_US
dc.contributor.authorChien, Chao Hsinen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2020-05-05T00:01:32Z-
dc.date.available2020-05-05T00:01:32Z-
dc.date.issued2020-02-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-019-07790-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/153965-
dc.description.abstractAn enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with La2O3/SiO2 gate insulator is investigated for high power application. The La2O3/SiO2 composite oxide formed amorphous La-silicate after post deposition annealing. Good oxide film quality and excellent La-silicate/AlGaN interface properties were achieved as evidenced by the capacitance-voltage (C-V) curves and hysteresis effect of the La-silicate on AlGaN/GaN metal-oxide-semiconductor capacitors. As a result, the E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator shows good threshold voltage (V-th) stability and demonstrated only slightly increase in the dynamic on-resistance (R-on) after high drain bias stress test. The device also exhibits high current density of 752 mA/mm, high maximum transconductance of 210 mS/mm, low subthreshold swing of 104 mV/decade, and I-ON/I-OFF = 10(7) when tested at V-DS = 10 V. Furthermore, low on-resistance of 7.6 omega mm, high breakdown voltage of 670 V, and excellent delay time of 4.2 ps were achieved, demonstrating the La-silicate MIS-HEMTs have the potential to be used for power electronic applications.en_US
dc.language.isoen_USen_US
dc.subjectAlGaNen_US
dc.subjectGaN MIS-HEMTen_US
dc.subjectE-modeen_US
dc.subjectLa2O3en_US
dc.subjectSiO2en_US
dc.subjectLa-silicateen_US
dc.subjectMOSCAPsen_US
dc.titleStudy of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-019-07790-7en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume49en_US
dc.citation.issue2en_US
dc.citation.spage1348en_US
dc.citation.epage1353en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000511718200053en_US
dc.citation.woscount0en_US
Appears in Collections:Articles