標題: | Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications |
作者: | Huang, Kuan Ning Lin, Yueh-Chin Lin, Jia-Ching Hsu, Chia Chieh Lee, Jin Hwa Wu, Chia-Hsun Yao, Jing Neng Hsu, Heng-Tung Nagarajan, Venkatesan Kakushima, Kuniyuki Tsutsui, Kazuo Iwai, Hiroshi Chien, Chao Hsin Chang, Edward Yi 材料科學與工程學系 照明與能源光電研究所 電子工程學系及電子研究所 國際半導體學院 Department of Materials Science and Engineering Institute of Lighting and Energy Photonics Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology |
關鍵字: | AlGaN;GaN MIS-HEMT;E-mode;La2O3;SiO2;La-silicate;MOSCAPs |
公開日期: | 1-二月-2020 |
摘要: | An enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with La2O3/SiO2 gate insulator is investigated for high power application. The La2O3/SiO2 composite oxide formed amorphous La-silicate after post deposition annealing. Good oxide film quality and excellent La-silicate/AlGaN interface properties were achieved as evidenced by the capacitance-voltage (C-V) curves and hysteresis effect of the La-silicate on AlGaN/GaN metal-oxide-semiconductor capacitors. As a result, the E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator shows good threshold voltage (V-th) stability and demonstrated only slightly increase in the dynamic on-resistance (R-on) after high drain bias stress test. The device also exhibits high current density of 752 mA/mm, high maximum transconductance of 210 mS/mm, low subthreshold swing of 104 mV/decade, and I-ON/I-OFF = 10(7) when tested at V-DS = 10 V. Furthermore, low on-resistance of 7.6 omega mm, high breakdown voltage of 670 V, and excellent delay time of 4.2 ps were achieved, demonstrating the La-silicate MIS-HEMTs have the potential to be used for power electronic applications. |
URI: | http://dx.doi.org/10.1007/s11664-019-07790-7 http://hdl.handle.net/11536/153965 |
ISSN: | 0361-5235 |
DOI: | 10.1007/s11664-019-07790-7 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 49 |
Issue: | 2 |
起始頁: | 1348 |
結束頁: | 1353 |
顯示於類別: | 期刊論文 |