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dc.contributor.authorYang, Shang-Hsienen_US
dc.contributor.authorChen, Ke-Horngen_US
dc.contributor.authorLin, Ying-Hsien_US
dc.contributor.authorLin, Shian-Ruen_US
dc.contributor.authorTsai, Tsung-Yenen_US
dc.date.accessioned2020-05-05T00:01:57Z-
dc.date.available2020-05-05T00:01:57Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-1550-4en_US
dc.identifier.issn1930-8833en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LSSC.2019.2930912en_US
dc.identifier.urihttp://hdl.handle.net/11536/154005-
dc.description.abstractThe proposed 6.78-MHz Class-E receiver features a soft-switching and temperature-compensated GaN-based active diode (GAD) rectifier design. Using the temperature dependence of the relationship between the driving voltage and the on-resistance of the switch, the gate-source control voltage of GaN can be adjusted to mitigate efficiency variations based on temperature effects. Moreover, a phase shift comparator activation controller is based on the direct relationship between the phase delay on the gate drive signals and the output power. The temperature dependency voltage offset of the comparator is alleviated with auto-zeroing. GAD rectifier ensures energy transfer up to 61 W and 6.8 A, high efficiency of 92%, and low harmonic distortion of 2.1%.en_US
dc.language.isoen_USen_US
dc.subjectAuto-zeroing (AZ)en_US
dc.subjectGaNen_US
dc.subjectsoft-switchingen_US
dc.subjecttemperature compensationen_US
dc.subjectwireless power transferen_US
dc.titleA Temperature Compensated 61-W Class-E Soft-Switching GaN-Based Active Diode Rectifier for Wireless Power Transfer Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/LSSC.2019.2930912en_US
dc.identifier.journalIEEE 45TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC 2019)en_US
dc.citation.spage203en_US
dc.citation.epage0en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000520410000069en_US
dc.citation.woscount0en_US
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