Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

Title:	Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs
Authors:	Lin, Y. C. Lee, M. W. Tsai, M. Y. Wang, C. Yao, J. N. Huang, T. J. Hsu, H. T. Maa, J. S. Chang, Edward Y. 材料科學與工程學系光電系統研究所電子工程學系及電子研究所國際半導體學院 Department of Materials Science and Engineering Institute of Photonic System Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology
Keywords:	copper metallization;AlGaN/GaN HEMT;low noise figure;thermal stability;interconnect metal
Issue Date:	1-Jan-2019
Abstract:	In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.
URI:	http://hdl.handle.net/11536/154014
ISBN:	978-2-87487-056-9
Journal:	2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019)
Begin Page:	68
End Page:	71
Appears in Collections:	Conferences Paper