Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

標題:	Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs
作者:	Lin, Y. C. Lee, M. W. Tsai, M. Y. Wang, C. Yao, J. N. Huang, T. J. Hsu, H. T. Maa, J. S. Chang, Edward Y. 材料科學與工程學系光電系統研究所電子工程學系及電子研究所國際半導體學院 Department of Materials Science and Engineering Institute of Photonic System Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology
關鍵字:	copper metallization;AlGaN/GaN HEMT;low noise figure;thermal stability;interconnect metal
公開日期:	1-一月-2019
摘要:	In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.
URI:	http://hdl.handle.net/11536/154014
ISBN:	978-2-87487-056-9
期刊:	2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019)
起始頁:	68
結束頁:	71
顯示於類別：	會議論文