標題: | Degradation Mechanism of Ge N+-P Shallow Junction With Thin GeSn Surface Layer |
作者: | Tsui, Bing-Yue Liao, Hsiu-Hsien Chen, Yi-Ju 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Germanium tin;leakage current;shallow junction |
公開日期: | 1-三月-2020 |
摘要: | In this article, the degradation mechanism of the Ge N+-P junctions with a thin GeSn surface layer is investigated, aiming for source/drain (S/D) application in emerging field-effect transistors. GeSn is a promising channel material with high carrier mobility, which can offer a better performance of the field-effect transistors. By performing thermal annealing at different temperatures, the reverse-biased leakage current increases apparently when annealing temperature exceeds 550 degrees C. X-ray diffraction (XRD) analysis indicates most Sn atoms escape from lattice sites while secondary-ion mass spectroscopy (SIMS) analysis indicates enhanced Sn diffusion in Ge bulk after ion implantation. Therefore, a degradation model considering Sn-defects interaction is proposed to explain the degradation of junction leakage current and possible solution is proposed. |
URI: | http://dx.doi.org/10.1109/TED.2019.2962267 http://hdl.handle.net/11536/154150 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2019.2962267 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 67 |
Issue: | 3 |
起始頁: | 1120 |
結束頁: | 1125 |
顯示於類別: | 期刊論文 |