標題: Thermal Stability of Shallow Ge N+-P Junction with Thin GeSn Top Layer
作者: Liao, Hsiu-Hsien
Chen, Yi-Ju
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2019
摘要: Thermal stability of the Ge N' -P junction with thin GeSn top Layer is evaluated in this work. Thin GeSn itself would not increase junction leakage current although its bandgap is narrower than Ge. However, high dose ion implantation would damage the GeSn layer and Ge substrate so that the diffusion coefficient of Sn atom in Ge is enhanced. In this case, thernial annealing higher than 500 C would degrade junction leakage current. It is thus suggested that low defects doping technique must be developed.
URI: http://hdl.handle.net/11536/153666
ISBN: 978-1-7281-0942-8
ISSN: 1930-8868
期刊: 2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
起始頁: 0
結束頁: 0
顯示於類別:會議論文