標題: Study on random telegraph noise of high-idmetal-gate gate-all-around poly-Si nanowire transistors
作者: Chang, You-Tai
Tsai, Yueh-Lin
Peng, Kang-Ping
Su, Chun-Jung
Li, Pei-Wen
Lin, Horng-Chih
交大名義發表
National Chiao Tung University
公開日期: 1-Apr-2020
摘要: In this Paper, we investigated random telegraph noise (RTN) characteristics of gate-all-around poly-Si nanowire (NW) transistors with high-kappa oxide/metal-gate (HK/MG) stack. Distinct two-level RTN signals were measured on NW transistors with effective channel length of 150 nm and channel width of 30 nm. Values of time constants for charge emission from and capture by traps were extracted from measured RTN signals We proposed a new theoretical scheme to evaluate the location and energy level of the corresponding trap. The trap was assessed to be present within the interfacial layer (IL) at a spatial location approximate 1 nm away from the IL/channel interface and 68 nm in proximity to the source side. (C) 2020 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/1347-4065/ab5b67
http://hdl.handle.net/11536/154174
ISSN: 0021-4922
DOI: 10.7567/1347-4065/ab5b67
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 59
起始頁: 0
結束頁: 0
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