標題: Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates
作者: Yang, Ting-Hsin
Su, Chun-Jung
Wang, Yu-Shun
Kao, Kuo-Hsing
Lee, Yao-Jen
Wu, Tian-Li
國際半導體學院
International College of Semiconductor Technology
公開日期: 1-Apr-2020
摘要: In this work, polarization-dependent time-dependent dielectric breakdown in ferroelectric HZO Ge MOSCAPs presented. First, ferroelectric HZO Ge MOSCAPs with and without in-situ NH3 plasma interfacial layer, treatment exhibit the two distinct remnant polarization (P-r), Secondly the device with a larger P-r shows a higher gate leakage current and smaller time-to-breakdown (t(BD)) compared to the device with a smaller P-r. Then, a physical model based on the high probability of the electron tunneling accelerating the formation of the percolation path is proposed. Finally, the device with large P-r shows a lower extrapolated operating voltage. However more than 1.5 V of the extracted operation voltage for 1% failure of 10 year lifetime in the device with large P-r still can be obtained. (C) 2020 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.35848/1347-4065/ab6865
http://hdl.handle.net/11536/154175
ISSN: 0021-4922
DOI: 10.35848/1347-4065/ab6865
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 59
起始頁: 0
結束頁: 0
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