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dc.contributor.authorXian, Minghanen_US
dc.contributor.authorFares, Chakeren_US
dc.contributor.authorRen, Fanen_US
dc.contributor.authorGila, Brent P.en_US
dc.contributor.authorChen, Yen-Tingen_US
dc.contributor.authorLiao, Yu-Teen_US
dc.contributor.authorTadjer, Markoen_US
dc.contributor.authorPearton, Stephen J.en_US
dc.date.accessioned2020-05-05T00:02:25Z-
dc.date.available2020-05-05T00:02:25Z-
dc.date.issued2019-11-01en_US
dc.identifier.issn2166-2746en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.5125006en_US
dc.identifier.urihttp://hdl.handle.net/11536/154231-
dc.description.abstractThe electrical and structural properties of sputter-deposited W Schottky contacts with Au overlayers on n-type Ga2O3 are found to be basically stable up to 500 degrees C. The reverse leakage in diode structures increases markedly (factor of 2) for higher temperature annealing of 550-600 degrees C. The sputter deposition process introduces near-surface damage that reduces the Schottky barrier height in the as-deposited state (0.71 eV), but this increases to 0.81 eV after a 60 s anneal at 500 degrees C. This is significantly lower than conventional Ni/Au (1.07 eV), but W is much more thermally stable, as evidenced by Auger electron spectroscopy of the contact and interfacial region and the minimal change in contact morphology. The contacts are used to demonstrate 1.2 A switching of forward current to -300 V reverse bias with a reverse recovery time of 100 ns and a dI/dt value of 2.14 A/mu s. The on/off current ratios were >= 10(6) at -100V reverse bias, and the power figure-of-merit was 14.4 MW cm(-2). Published by the AVS.en_US
dc.language.isoen_USen_US
dc.titleEffect of thermal annealing for W/beta-Ga2O3 Schottky diodes up to 600 degrees Cen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.5125006en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume37en_US
dc.citation.issue6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000522021700004en_US
dc.citation.woscount2en_US
Appears in Collections:Articles