完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Xian, Minghan | en_US |
dc.contributor.author | Fares, Chaker | en_US |
dc.contributor.author | Ren, Fan | en_US |
dc.contributor.author | Gila, Brent P. | en_US |
dc.contributor.author | Chen, Yen-Ting | en_US |
dc.contributor.author | Liao, Yu-Te | en_US |
dc.contributor.author | Tadjer, Marko | en_US |
dc.contributor.author | Pearton, Stephen J. | en_US |
dc.date.accessioned | 2020-05-05T00:02:25Z | - |
dc.date.available | 2020-05-05T00:02:25Z | - |
dc.date.issued | 2019-11-01 | en_US |
dc.identifier.issn | 2166-2746 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.5125006 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/154231 | - |
dc.description.abstract | The electrical and structural properties of sputter-deposited W Schottky contacts with Au overlayers on n-type Ga2O3 are found to be basically stable up to 500 degrees C. The reverse leakage in diode structures increases markedly (factor of 2) for higher temperature annealing of 550-600 degrees C. The sputter deposition process introduces near-surface damage that reduces the Schottky barrier height in the as-deposited state (0.71 eV), but this increases to 0.81 eV after a 60 s anneal at 500 degrees C. This is significantly lower than conventional Ni/Au (1.07 eV), but W is much more thermally stable, as evidenced by Auger electron spectroscopy of the contact and interfacial region and the minimal change in contact morphology. The contacts are used to demonstrate 1.2 A switching of forward current to -300 V reverse bias with a reverse recovery time of 100 ns and a dI/dt value of 2.14 A/mu s. The on/off current ratios were >= 10(6) at -100V reverse bias, and the power figure-of-merit was 14.4 MW cm(-2). Published by the AVS. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effect of thermal annealing for W/beta-Ga2O3 Schottky diodes up to 600 degrees C | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.5125006 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 37 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000522021700004 | en_US |
dc.citation.woscount | 2 | en_US |
顯示於類別: | 期刊論文 |