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dc.contributor.authorThu, L. M.en_US
dc.contributor.authorChiu, W. T.en_US
dc.contributor.authorLin, Ta-Chunen_US
dc.contributor.authorVoskoboynikov, O.en_US
dc.date.accessioned2014-12-08T15:21:42Z-
dc.date.available2014-12-08T15:21:42Z-
dc.date.issued2011en_US
dc.identifier.issn1862-6351en_US
dc.identifier.urihttp://hdl.handle.net/11536/15423-
dc.identifier.urihttp://dx.doi.org/10.1002/pssc.201000449en_US
dc.description.abstractWe simulate magneto-excitons confined in asymmetrically wobbled three-dimensional InAs/GaAs nano-rings. The wobbling asymmetry reproduces realistic experimental geometry of the rings and generates an asymmetry in the side valleys of the three dimensional confinement potential. Using our mapping method and the exact diagonization approach we calculated the excitonic diamagnetic shift and found that even a small wobbling asymmetry can drastically change the diamagnetic shift coefficient. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.language.isoen_USen_US
dc.subjectnano-ringsen_US
dc.subjectexcitonen_US
dc.subjectdiamagnetic shiften_US
dc.titleEffect of geometry on the excitonic diamagnetic shift of nano-ringsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1002/pssc.201000449en_US
dc.identifier.journalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2en_US
dc.citation.volume8en_US
dc.citation.issue2en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000301533800043-
Appears in Collections:Conferences Paper


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