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dc.contributor.authorChen, Yi-Hsuanen_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorYang, Ting-Hsinen_US
dc.contributor.authorHu, Chenmingen_US
dc.contributor.authorWu, Tian-Lien_US
dc.date.accessioned2020-05-05T00:02:26Z-
dc.date.available2020-05-05T00:02:26Z-
dc.date.issued2020-04-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2020.2973652en_US
dc.identifier.urihttp://hdl.handle.net/11536/154247-
dc.description.abstractThis article reports that the enhanced forward gate bias time-dependent dielectric breakdown (TDDB) reliability and interface quality are achieved in 5-nm ferroelectric Hf0.5Zr0.5O2 (HZO) technologies by using the NH3 plasma interfacial layer (IL) treatment and microwave annealing (MWA). An orthorhombic crystalline phase is observed in the annealed HZO film with NH3 plasma IL treatment and MWA, and NH3 plasma IL treatment can suppress Hf/Zr interdiffusion. Metal-oxide-semiconductor capacitors (MOSCAPs) subjected to NH3 plasma IL treatment and 2100-W MWA also have a higher extrapolated operating voltage for a ten-year lifetime at 0.01% failure and lower interface state density compared to the devices subjected to only rapid thermal annealing (RTA) at 600 degrees C. Therefore, NH3 plasma treatment and MWA are effective for improving the TDDB reliability and interface quality of the ultrathin ferroelectric HZO.en_US
dc.language.isoen_USen_US
dc.subjectAmmonia treatmenten_US
dc.subjectferroelectricityen_US
dc.subjecthafnium zirconium oxideen_US
dc.subjectinterface state densityen_US
dc.subjecttime-dependent dielectric breakdown (TDDB)en_US
dc.titleImproved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2020.2973652en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume67en_US
dc.citation.issue4en_US
dc.citation.spage1581en_US
dc.citation.epage1585en_US
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000522559000029en_US
dc.citation.woscount0en_US
Appears in Collections:Articles