標題: | Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals |
作者: | Lu, Li-Syuan Chen, Guan-Hao Cheng, Hui-Yu Chuu, Chih-Piao Lu, Kuan-Cheng Chen, Chia-Hao Lu, Ming-Yen Chuang, Tzu-Hung Wei, Der-Hsin Chueh, Wei-Chen Jian, Wen-Bin Li, Ming-Yang Chang, Yu-Ming Li, Lain-Jong Chang, Wen-Hao 交大名義發表 電子物理學系 National Chiao Tung University Department of Electrophysics |
關鍵字: | two-dimensional materials;transition metal dichalcogenides;palladium diselenide;PdSe2;chemical vapor deposition;CVD |
公開日期: | 28-四月-2020 |
摘要: | Palladium diselenide (PdSe2), a peculiar noble metal dichalcogenide, has emerged as a new two-dimensional material with high predicted carrier mobility and a widely tunable band gap for device applications. The inherent in-plane anisotropy endowed by the pentagonal structure further renders PdSe2 promising for novel electronic, photonic, and thermoelectric applications. However, the direct synthesis of few-layer PdSe2 is still challenging and rarely reported. Here, we demonstrate that few-layer, single-crystal PdSe2 flakes can be synthesized at a relatively low growth temperature (300 degrees C) on sapphire substrates using low-pressure chemical vapor deposition (CVD). The well-defined rectangular domain shape and precisely determined layer number of the CVD-grown PdSe2 enable us to investigate their layer-dependent and in-plane anisotropic properties. The experimentally determined layer-dependent band gap shrinkage combined with first-principle calculations suggest that the interlayer interaction is weaker in few-layer PdSe2 in comparison with that in bulk crystals. Field-effect transistors based on the CVD-grown PdSe2 also show performances comparable to those based on exfoliated samples. The low-temperature synthesis method reported here provides a feasible approach to fabricate high-quality few-layer PdSe2 for device applications. |
URI: | http://dx.doi.org/10.1021/acsnano.0c01139 http://hdl.handle.net/11536/154299 |
ISSN: | 1936-0851 |
DOI: | 10.1021/acsnano.0c01139 |
期刊: | ACS NANO |
Volume: | 14 |
Issue: | 4 |
起始頁: | 4963 |
結束頁: | 4972 |
顯示於類別: | 期刊論文 |