標題: Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals
作者: Lu, Li-Syuan
Chen, Guan-Hao
Cheng, Hui-Yu
Chuu, Chih-Piao
Lu, Kuan-Cheng
Chen, Chia-Hao
Lu, Ming-Yen
Chuang, Tzu-Hung
Wei, Der-Hsin
Chueh, Wei-Chen
Jian, Wen-Bin
Li, Ming-Yang
Chang, Yu-Ming
Li, Lain-Jong
Chang, Wen-Hao
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
關鍵字: two-dimensional materials;transition metal dichalcogenides;palladium diselenide;PdSe2;chemical vapor deposition;CVD
公開日期: 28-Apr-2020
摘要: Palladium diselenide (PdSe2), a peculiar noble metal dichalcogenide, has emerged as a new two-dimensional material with high predicted carrier mobility and a widely tunable band gap for device applications. The inherent in-plane anisotropy endowed by the pentagonal structure further renders PdSe2 promising for novel electronic, photonic, and thermoelectric applications. However, the direct synthesis of few-layer PdSe2 is still challenging and rarely reported. Here, we demonstrate that few-layer, single-crystal PdSe2 flakes can be synthesized at a relatively low growth temperature (300 degrees C) on sapphire substrates using low-pressure chemical vapor deposition (CVD). The well-defined rectangular domain shape and precisely determined layer number of the CVD-grown PdSe2 enable us to investigate their layer-dependent and in-plane anisotropic properties. The experimentally determined layer-dependent band gap shrinkage combined with first-principle calculations suggest that the interlayer interaction is weaker in few-layer PdSe2 in comparison with that in bulk crystals. Field-effect transistors based on the CVD-grown PdSe2 also show performances comparable to those based on exfoliated samples. The low-temperature synthesis method reported here provides a feasible approach to fabricate high-quality few-layer PdSe2 for device applications.
URI: http://dx.doi.org/10.1021/acsnano.0c01139
http://hdl.handle.net/11536/154299
ISSN: 1936-0851
DOI: 10.1021/acsnano.0c01139
期刊: ACS NANO
Volume: 14
Issue: 4
起始頁: 4963
結束頁: 4972
Appears in Collections:Articles