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dc.contributor.authorKumar, Dayananden_US
dc.contributor.authorChand, Umeshen_US
dc.contributor.authorSiang, Lew Wenen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2020-07-01T05:21:14Z-
dc.date.available2020-07-01T05:21:14Z-
dc.date.issued2020-05-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2020.2981529en_US
dc.identifier.urihttp://hdl.handle.net/11536/154312-
dc.description.abstractIn this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (10(7)), a rapid speed (45 ns) and stable retention (10(4) s) at 100 degrees C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.en_US
dc.language.isoen_USen_US
dc.subjectTinen_US
dc.subjectSwitchesen_US
dc.subjectNitrogenen_US
dc.subjectElectrodesen_US
dc.subjectRandom access memoryen_US
dc.subjectRRAMen_US
dc.subjectnitrogen ionsen_US
dc.subjectconductive filamenten_US
dc.subjectresistive switchingen_US
dc.titleZrN-Based Flexible Resistive Switching Memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2020.2981529en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume41en_US
dc.citation.issue5en_US
dc.citation.spage705en_US
dc.citation.epage708en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000530387100013en_US
dc.citation.woscount0en_US
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