標題: | Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist |
作者: | Chen, Sung-Wen Huang Huang, Yu-Ming Singh, Konthoujam James Hsu, Yu-Chien Liou, Fang-Jyun Song, Jie Choi, Joowon Lee, Po-Tsung Lin, Chien-Chung Chen, Zhong Han, Jung Wu, Tingzhu Kuo, Hao-Chung 交大名義發表 光電系統研究所 National Chiao Tung University Institute of Photonic System |
公開日期: | 1-May-2020 |
摘要: | Red-green-blue (RGB) full-color micro light-emitting diodes (mu-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN mu-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar mu-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under 200 A/cm(2 )injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar mu-LEDs' emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020). (C) 2020 Chinese Laser Press |
URI: | http://dx.doi.org/10.1364/PRJ.388958 http://hdl.handle.net/11536/154324 |
ISSN: | 2327-9125 |
DOI: | 10.1364/PRJ.388958 |
期刊: | PHOTONICS RESEARCH |
Volume: | 8 |
Issue: | 5 |
起始頁: | 630 |
結束頁: | 636 |
Appears in Collections: | Articles |