標題: Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist
作者: Chen, Sung-Wen Huang
Huang, Yu-Ming
Singh, Konthoujam James
Hsu, Yu-Chien
Liou, Fang-Jyun
Song, Jie
Choi, Joowon
Lee, Po-Tsung
Lin, Chien-Chung
Chen, Zhong
Han, Jung
Wu, Tingzhu
Kuo, Hao-Chung
交大名義發表
光電系統研究所
National Chiao Tung University
Institute of Photonic System
公開日期: 1-May-2020
摘要: Red-green-blue (RGB) full-color micro light-emitting diodes (mu-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN mu-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar mu-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under 200 A/cm(2 )injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar mu-LEDs' emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020). (C) 2020 Chinese Laser Press
URI: http://dx.doi.org/10.1364/PRJ.388958
http://hdl.handle.net/11536/154324
ISSN: 2327-9125
DOI: 10.1364/PRJ.388958
期刊: PHOTONICS RESEARCH
Volume: 8
Issue: 5
起始頁: 630
結束頁: 636
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