Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsu, Wei-Fan | en_US |
dc.contributor.author | Lu, Li-Syuan | en_US |
dc.contributor.author | Kuo, Po-Chun | en_US |
dc.contributor.author | Chen, Jie-He | en_US |
dc.contributor.author | Chueh, Wei-Chen | en_US |
dc.contributor.author | Yeh, Han | en_US |
dc.contributor.author | Kao, Hui-Ling | en_US |
dc.contributor.author | Chen, Jyh-Shin | en_US |
dc.contributor.author | Chang, Wen-Hao | en_US |
dc.date.accessioned | 2020-07-01T05:21:15Z | - |
dc.date.available | 2020-07-01T05:21:15Z | - |
dc.date.issued | 2019-04-01 | en_US |
dc.identifier.issn | 2574-0970 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/acsanm.8b02358 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/154330 | - |
dc.description.abstract | Growing a single-crystalline film on a substrate relies on the compatibility of crystal symmetry and lattice constant between the two materials. Such limitations can be circumvented by introducing van der Waals epitaxy of three-dimensional (3D) crystals on two-dimensional (2D) layered materials. Recently, buffer-assisted growth of III-nitride films on graphene has been demonstrated. However, the low chemical reactivity of graphene surface considerably limits the large-area and single-crystalline growth of planar 3D films on 2D layered materials. Here, we demonstrate that using highly oriented monolayer MoS2 as a buffer layer, single-crystalline AlN thin films can be grown on Si(100) substrates, which possess a different crystal symmetry with the films. The AlN films were grown by helicon sputtering system at low temperature (400 degrees C), showing a very flat surface with a root-mean-square roughness of 1.0 nm and an X-ray rocking curve with a full width at half-maximum of 0.336 degrees, indicating a high-crystalline quality. Because the buffer layer as well as the AlN films were prepared at low temperatures, our results not only pave the way for integrating III-nitride with the Si wafer industry process but also open a new possibility for growing III-nitride thin film on various foreign substrates. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | single-crystalline AlN film | en_US |
dc.subject | highly oriented MoS2 monolayer | en_US |
dc.subject | low-temperature sputtering | en_US |
dc.subject | van der Waals epitaxy | en_US |
dc.subject | Transition metal dichalcogenide | en_US |
dc.title | Monolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputtering | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/acsanm.8b02358 | en_US |
dc.identifier.journal | ACS APPLIED NANO MATERIALS | en_US |
dc.citation.volume | 2 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 1964 | en_US |
dc.citation.epage | 1969 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000466443000022 | en_US |
dc.citation.woscount | 2 | en_US |
Appears in Collections: | Articles |