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dc.contributor.authorHsu, Wei-Fanen_US
dc.contributor.authorLu, Li-Syuanen_US
dc.contributor.authorKuo, Po-Chunen_US
dc.contributor.authorChen, Jie-Heen_US
dc.contributor.authorChueh, Wei-Chenen_US
dc.contributor.authorYeh, Hanen_US
dc.contributor.authorKao, Hui-Lingen_US
dc.contributor.authorChen, Jyh-Shinen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.date.accessioned2020-07-01T05:21:15Z-
dc.date.available2020-07-01T05:21:15Z-
dc.date.issued2019-04-01en_US
dc.identifier.issn2574-0970en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsanm.8b02358en_US
dc.identifier.urihttp://hdl.handle.net/11536/154330-
dc.description.abstractGrowing a single-crystalline film on a substrate relies on the compatibility of crystal symmetry and lattice constant between the two materials. Such limitations can be circumvented by introducing van der Waals epitaxy of three-dimensional (3D) crystals on two-dimensional (2D) layered materials. Recently, buffer-assisted growth of III-nitride films on graphene has been demonstrated. However, the low chemical reactivity of graphene surface considerably limits the large-area and single-crystalline growth of planar 3D films on 2D layered materials. Here, we demonstrate that using highly oriented monolayer MoS2 as a buffer layer, single-crystalline AlN thin films can be grown on Si(100) substrates, which possess a different crystal symmetry with the films. The AlN films were grown by helicon sputtering system at low temperature (400 degrees C), showing a very flat surface with a root-mean-square roughness of 1.0 nm and an X-ray rocking curve with a full width at half-maximum of 0.336 degrees, indicating a high-crystalline quality. Because the buffer layer as well as the AlN films were prepared at low temperatures, our results not only pave the way for integrating III-nitride with the Si wafer industry process but also open a new possibility for growing III-nitride thin film on various foreign substrates.en_US
dc.language.isoen_USen_US
dc.subjectsingle-crystalline AlN filmen_US
dc.subjecthighly oriented MoS2 monolayeren_US
dc.subjectlow-temperature sputteringen_US
dc.subjectvan der Waals epitaxyen_US
dc.subjectTransition metal dichalcogenideen_US
dc.titleMonolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsanm.8b02358en_US
dc.identifier.journalACS APPLIED NANO MATERIALSen_US
dc.citation.volume2en_US
dc.citation.issue4en_US
dc.citation.spage1964en_US
dc.citation.epage1969en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000466443000022en_US
dc.citation.woscount2en_US
Appears in Collections:Articles