標題: Observing topotactic phase transformation and resistive switching behaviors in low power SrCoOx memristor
作者: Lo, Hung-Yang
Yang, Chih-Yu
Huang, Guan-Ming
Huang, Chih-Yang
Chen, Jui-Yuan
Huang, Chun-Wei
Chu, Ying-Hao
Wu, Wen-Wei
交大名義發表
材料科學與工程學系
National Chiao Tung University
Department of Materials Science and Engineering
關鍵字: Complex oxides;SrCoOx;RRAM;Topotactic phase transformation;In situ TEM
公開日期: 1-Jun-2020
摘要: Recently, complex oxides have been shown to be promising candidate in dielectric materials of resistive random access memory (RRAM). However, the detailed switching information of complex oxide RRAM is still insufficient, and direct observation of the whole switching process is required to figure out the mechanism. In this study, we deposited SrCoOx (SCO) on a niobium-doped SrTiO3 substrate as the dielectric layer via pulsed laser deposition (PLD). The novel SCO device possesses excellent RRAM properties, high cycling endurance, a long data retention time, and uniform distributions of the high resistance state (HRS) and low resistance state (LRS) resistance and Set/Reset voltage. Furthermore, the switching mechanism was investigated by using transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM), which showed that the switching behavior resulted from the topotactic phase transformation. In addition, the whole switching process was observed through in situ TEM, and the results strengthened the findings of the ex situ experiment. The discussion of this switching behavior provides support for a novel aspect of the RRAM switching mechanism and also a new option for the dielectric material in RRAM.
URI: http://dx.doi.org/10.1016/j.nanoen.2020.104683
http://hdl.handle.net/11536/154357
ISSN: 2211-2855
DOI: 10.1016/j.nanoen.2020.104683
期刊: NANO ENERGY
Volume: 72
起始頁: 0
結束頁: 0
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