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dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorHuang, Sung-Hungen_US
dc.contributor.authorTseng, Yi-Wenen_US
dc.date.accessioned2014-12-08T15:21:43Z-
dc.date.available2014-12-08T15:21:43Z-
dc.date.issued2011en_US
dc.identifier.isbn978-1-60768-279-0en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/15442-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3641391en_US
dc.description.abstractFluorine incorporation into the HfO2 gate dielectrics by post CF4 plasma treatment in an inductively coupled plasma chamber was proposed to improve gate leakage current and modify surface property for low-temperature fabrication. During the whole process, the temperature is controlled below 150 degrees C. The low-leakage HfO2 dielectric treated by CF4 plasma was characterized and then utilized in pentacene-based OTFTs. After CF4 plasma treatment, the gate leakage and field effect mobility were effectively improved. By integrating high-k HfO2 by CF4 plasma treatment and HMDS evaporation treatment, a low operating voltage (-4V), low threshold voltage (-1.12V), a low subthreshold swing (266 mV/decade), a field-effect mobility (0.029cm(2)/Vs) and an on/off current ratio (>10(4)) were obtained.en_US
dc.language.isoen_USen_US
dc.titlePerformance improvement of pentacene-based organic thin-film transistor with HfO2 gate dielectrics treated by CF4 plasmaen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3641391en_US
dc.identifier.journalORGANIC SEMICONDUCTOR MATERIALS, DEVICES, AND PROCESSING 3en_US
dc.citation.volume35en_US
dc.citation.issue19en_US
dc.citation.spage1en_US
dc.citation.epage9en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000300766100001-
Appears in Collections:Conferences Paper


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