標題: Exciton Localization of High-Quality ZnO/MgxZn1-x Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer
作者: Liu, Wei-Rein
Huang, Wei-Lun
Wu, Yung-Chi
Lai, Liang-Hsun
Hsu, Chia-Hung
Hsieh, Wen-Feng
Chiang, Tsung-Hung
Wan, H. W.
Hong, M.
Kao, J.
交大名義發表
光電工程學系
National Chiao Tung University
Department of Photonics
關鍵字: ZnO;multiple quantum wells;quantum confinement;interface;Si;exciton localization
公開日期: 1-Aug-2018
摘要: We report the structural and optical properties of ten-period ZnO/MgxZn1-x multiple quantum wells (MQWs) prepared on the most widely used semiconductor material, Si. The introduction of a nanometer thick high-k Y2O3 transition layer between Si (111) substrate and a ZnO buffer layer significantly improves the structural perfection of the MQWs grown on top of it. The high structural quality of the ZnO/MgxZn1-xO MQWs is evidenced by the appearance of pronounced high order satellite peaks in X-ray crystal truncation rods; high resolution cross-sectional transmission electron microscopy images also confirmed the regularly arranged well and barrier layers. When the well width is less than similar to 2.7 nm, the quantum-confined Stark effect in MQWs can be negligible. Not only the increasing exciton-binding energy but also reducing exciton-phonon coupling determined in temperature-dependent photoluminescence spectra indicate quantum-size effect. Our results demonstrate that ZnO/MgxZn1-xO MQWs integrated on Si have great potential in UV optoelectronic device applications.
URI: http://dx.doi.org/10.1021/acsanm.8b00595
http://hdl.handle.net/11536/154432
ISSN: 2574-0970
DOI: 10.1021/acsanm.8b00595
期刊: ACS APPLIED NANO MATERIALS
Volume: 1
Issue: 8
起始頁: 3829
結束頁: 3836
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