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dc.contributor.authorPatil, Ranjit A.en_US
dc.contributor.authorTu, Hao-Weien_US
dc.contributor.authorJen, Ming-Hsingen_US
dc.contributor.authorLin, Jing-Jiaen_US
dc.contributor.authorWu, Ching-Cherngen_US
dc.contributor.authorYang, Chun-Chuenen_US
dc.contributor.authorDuy Van Phamen_US
dc.contributor.authorTsai, Chih-Hungen_US
dc.contributor.authorLai, Chien-Chihen_US
dc.contributor.authorLiou, Yungen_US
dc.contributor.authorJian, Wen-Binen_US
dc.contributor.authorMa, Yuan-Ronen_US
dc.date.accessioned2020-07-01T05:21:21Z-
dc.date.available2020-07-01T05:21:21Z-
dc.date.issued2020-03-01en_US
dc.identifier.issn2542-5293en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mtphys.2019.100174en_US
dc.identifier.urihttp://hdl.handle.net/11536/154438-
dc.description.abstractThere are many candidate materials that can be used as channel materials for the next-generation field effect transistors (FETs). CrI3 is one of the particular candidates for application in FET, because it is a two-dimensional (2D) ferromagnet and has giant tunneling magnetoresistance. The ferromagnetic nature extends to not only electronics but also spintronics. In this study, the large-area, layered, and crystalline 2D CrI3 were synthesized by horizontal Bridgman method. The suspended CrI3 FETs were fabricated for explorations of intrinsic electron transport in the CrI3 channel and of electrical contact problems. The suspended FET structure lets the CrI3 channel free from trapping charges in the SiO2-capped Si substrate. The oneoff ratio of the suspended CrI3 FET is up to 10(4), making the 2D layered CrI3 potential for future FETs. The investigations of the mobility and the interface-trap density at various temperatures reveal that the trapping charges as well as the interface-trap densities are increased with further gas adsorption on the surface of the CrI3 flake. The performance of the suspended CrI3 FET can be improved, if the gas adsorption problem can be carefully treated. (c) 2020 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectChromium triiodideen_US
dc.subjectTwo-dimensional materialsen_US
dc.subjectLarge-areaen_US
dc.subjectField effect transistorsen_US
dc.titleIntriguing field-effect-transistor performance of two-dimensional layered and crystalline CrI3en_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mtphys.2019.100174en_US
dc.identifier.journalMATERIALS TODAY PHYSICSen_US
dc.citation.volume12en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000528878800005en_US
dc.citation.woscount1en_US
Appears in Collections:Articles