標題: Annealed Polycrystalline TiO2 Interlayer of the n-Si/TiO2/Ni Photoanode for Efficient Photoelectrochemical Water Splitting
作者: Chuang, Chi-Huang
Lai, Yung-Yu
Hou, Cheng-Hung
Cheng, Yuh-Jen
材料科學與工程學系
光電工程學系
光電工程研究所
Department of Materials Science and Engineering
Department of Photonics
Institute of EO Enginerring
關鍵字: water splitting;photoelectrochemistry;photoanode;photovoltage;junction interlayer;thermal annealing
公開日期: 27-Apr-2020
摘要: High photovoltage generation from a photoelectrode is important for efficient solar-driven water splitting. Here, we report a thermal treatment process that greatly enhances photovoltage generation from an n-Si/TiO2/Ni photoanode. By selectively annealing the TiO2 interlayer, the photoanode generates a high photovoltage of 570 mV, which is very competitive as compared with photovoltages produced using other similar metal-insulator-semiconductor structures with earth-abundant metal catalysts. Different annealing conditions and junction layer thicknesses were systematically investigated. It is found that the optimal annealing temperature occurs between 500 and 600 degrees C. Within this temperature range, the deposited amorphous Ti is converted into polycrystalline anatase phase TiO2. The optimal annealing time scales linearly with TiO2 thickness and inversely with annealing temperature. The large photovoltage generation is attributed to the reduced defect states and improved junction barrier height by the annealed TiO2 interlayer. This study demonstrates that thermal annealing offers an attractive approach to modify the TiO2 interlayer material's properties for photovoltage optimization.
URI: http://dx.doi.org/10.1021/acsaem.0c00319
http://hdl.handle.net/11536/154451
ISSN: 2574-0962
DOI: 10.1021/acsaem.0c00319
期刊: ACS APPLIED ENERGY MATERIALS
Volume: 3
Issue: 4
起始頁: 3902
結束頁: 3908
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