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dc.contributor.authorChung, Sheng-Tien_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2020-07-01T05:22:04Z-
dc.date.available2020-07-01T05:22:04Z-
dc.date.issued2020-01-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2020.2992797en_US
dc.identifier.urihttp://hdl.handle.net/11536/154492-
dc.description.abstractIn this study, an effective method was proposed to enhance the current drivability of junctionless field-effect transistors (JL-FETs) by utilizing ferroelectric effects. The ferroelectric layers were deposited on JL-FinFETs. The poly-Si junctionless FinFETs (JL-FinFETs) with HfZrO were successfully fabricated and demonstrated. The subthreshold slope (S.S.) of JL-FinFETs with HfZrO was very sensitive to post-metal annealing (PMA) conditions and fin width. With PMA at 700 & x00B0;C, steeper S.S. and I<sub>on</sub>& x002F;I<sub>off</sub>> 10(7) could be obtained owing to the ferroelectric effect. JL-FinFETs with PMA at 700 & x00B0;C possessed lower I<sub>off</sub> and offered the promise of higher integration flexibility for Si CMOS compatible process for future applications. Besides, the JL-FinFETs with forming gas annealing (FGA) had a small hysteresis and achieved the improved S.S.en_US
dc.language.isoen_USen_US
dc.subjectAnnealingen_US
dc.subjectCapacitorsen_US
dc.subjectFilmsen_US
dc.subjectLogic gatesen_US
dc.subjectFinFETsen_US
dc.subjectLeakage currentsen_US
dc.subjectJunctionless field-effect-transistor (JL-FET)en_US
dc.subjectferroelectricen_US
dc.subjectPMAen_US
dc.subjectFinFETsen_US
dc.subjectforming gas annealing (FGA)en_US
dc.titleCharacteristics of Poly-Si Junctionless FinFETs With HfZrO Using Forming Gas Annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2020.2992797en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume19en_US
dc.citation.spage390en_US
dc.citation.epage396en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000538020700004en_US
dc.citation.woscount0en_US
Appears in Collections:Articles