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dc.contributor.authorChang, Po-Yien_US
dc.contributor.authorLin, Ching-Fuen_US
dc.contributor.authorRouphael, Samer El Khouryen_US
dc.contributor.authorHuang, Ting-Hsuanen_US
dc.contributor.authorWu, Chang-Maoen_US
dc.contributor.authorBerling, Dominiqueen_US
dc.contributor.authorYeh, Ping-Hungen_US
dc.contributor.authorLu, Chia-Jungen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorSoppera, Olivieren_US
dc.date.accessioned2020-07-01T05:22:06Z-
dc.date.available2020-07-01T05:22:06Z-
dc.date.issued2020-06-03en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.0c03257en_US
dc.identifier.urihttp://hdl.handle.net/11536/154514-
dc.description.abstractA metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200-300 degrees C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR-laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in ppb concentration), with room-temperature operation on a bendable substrate.en_US
dc.language.isoen_USen_US
dc.subjectgas sensoren_US
dc.subjectIZOen_US
dc.subjectsol-gelen_US
dc.subjectlaser annealingen_US
dc.subjectNIRen_US
dc.subjectflexibleen_US
dc.titleNear-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsami.0c03257en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume12en_US
dc.citation.issue22en_US
dc.citation.spage24984en_US
dc.citation.epage24991en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000538515700049en_US
dc.citation.woscount0en_US
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