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dc.contributor.authorElangovan, Suryaen_US
dc.contributor.authorCheng, Stoneen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2020-07-01T05:22:07Z-
dc.date.available2020-07-01T05:22:07Z-
dc.date.issued2020-05-01en_US
dc.identifier.urihttp://dx.doi.org/10.3390/en13102628en_US
dc.identifier.urihttp://hdl.handle.net/11536/154525-
dc.description.abstractWe present a detailed study of dynamic switching instability and static reliability of a Gallium Nitride (GaN) Metal-Insulator-Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) based cascode switch under off-state (negative bias) Gate bias stress (V-GS,V- OFF). We have investigated drain channel current (I-DS,I- Max) collapse/degradation and turn-on and rise-time (t(R)) delay, on-state resistance (RDS-ON) and maximum transconductance (G(m, max)) degradation and threshold voltage (V-TH) shift for pulsed and prolonged off-state gate bias stress V-GS,V- OFF. We have found that as stress voltage magnitude and stress duration increases, similarly I-DS,I- Max and RDS-ON degradation, V-TH shift and turn-on/rise time (t(R)) delay, and G(m, max) degradation increases. In a pulsed off-state V-GS,V- OFF stress experiment, the device instabilities and degradation with electron trapping effects are studied through two regimes of stress voltages. Under low stress, V-TH shift, I-DS collapse, RDS-ON degradation has very minimal changes, which is a result of a recoverable surface state trapping effect. For high-stress voltages, there is an increased and permanent V-TH shift and high I-DS,I- Max and RDS-ON degradation in pulsed V-GS,V- Stress and increased rise-time and turn-on delay. In addition to this, a positive V-TH shift and G(m, max) degradation were observed in prolonged stress experiments for selected high-stress voltages, which is consistent with interface state generation. These findings provide a path to understand the failure mechanisms under room temperature and also to accelerate the developments of emerging GaN cascode technologies.en_US
dc.language.isoen_USen_US
dc.subjectgallium nitride HEMTen_US
dc.subjectcascode configurationen_US
dc.subjectoff-state gate bias stressen_US
dc.subjectdevice degradationen_US
dc.subjectfailure mechanismsen_US
dc.subjectelectronic trapping effectsen_US
dc.titleReliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/en13102628en_US
dc.identifier.journalENERGIESen_US
dc.citation.volume13en_US
dc.citation.issue10en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000539257300220en_US
dc.citation.woscount0en_US
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