標題: The influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrate
作者: Chang, Shane
Zhao, Ming
Spampinato, Valentina
Franquet, Alexis
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: AlN nucleation layer;coplanar waveguides;GaN on Si;high frequency;RF loss;metalorganic chemical vapor deposition
公開日期: 1-Mar-2020
摘要: A sufficiently low transmission loss in radio frequency (RF) is one of the critical requirements for GaN-on-Si RF devices to achieve high performance. We have systematically studied the mechanism and effect of the AlN nucleation layer on the RF loss of the GaN-on-Si device buffer stack. Our results show that the RF loss is strongly influenced by the growth parameters of the AlN nucleation layer during epitaxial process. It is observed that the AlN nucleation layer grown at a low thermal budget with a low density of deep surface pits can efficiently reduce the AlN/Si interface loss by suppressing the conductive channel at AlN/Si interface which is governed largely by the thermal diffusion of Al and Ga into the Si substrate. By optimizing the growth process of the AlN nucleation layer, the RF loss of the GaN-on-Si device buffer can be dramatically reduced by up to similar to 40%.
URI: http://dx.doi.org/10.1088/1361-6641/ab7149
http://hdl.handle.net/11536/154639
ISSN: 0268-1242
DOI: 10.1088/1361-6641/ab7149
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 35
Issue: 3
起始頁: 0
結束頁: 0
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