標題: Dimensionally anisotropic graphene with high mobility and a high on-off ratio in a three-terminal RRAM device
作者: Liu, Bo
Tai, Han Hsiang
Liang, Hanyuan
Zheng, En-Yan
Sahoo, Mamina
Hsu, Chih Hsien
Chen, Tsung-Cheng
Huang, Chin An
Wang, Jer-Chyi
Hou, Tuo-Hung
Lai, Chao-Sung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-2020
摘要: In the past decade, graphene has aroused worldwide academic passion in the electronics community, due to its unique two dimensional lattice structure and high mobility properties. Meanwhile, the utilization of graphene for next-generation nano-electronic materials is still under debate due to its intrinsic zero band gap nature. To meet the requirement of logic applications, diversified academic attempts have been carried out to modify its intrinsic band structure, such as doping, bilayer stacking, nano-patterning, or heterostructures. In this work, a tailor made strategy for graphene is proposed and experimentally demonstrated: a dimensionally anisotropic graphene based three terminal resistive random-access memory (RRAM). This device could be operated in two modes, which realized not only high carrier mobility (10(3) cm(2) V-1 s(-1)) and low gate leakage in field effect mode, but also a high on-off ratio (10(7)) and ultra-low off state current (1 pA) in resistive switching mode. This device also exhibits high reliability in logic data storage: long retention up to 8000 s, endurance of 400 DC operation cycles, and read immunity up to 1 million cycles. To guarantee the dimensional uniformity and high quality of the graphene, surface polishing and passivation techniques were carried out on Cu foil before graphene CVD synthesis. As demonstrated in this study, the current work paves the way for graphene toward practical logic and memory applications with high performance and low steady state power consumption.
URI: http://dx.doi.org/10.1039/d0qm00152j
http://hdl.handle.net/11536/154817
DOI: 10.1039/d0qm00152j
期刊: MATERIALS CHEMISTRY FRONTIERS
Volume: 4
Issue: 6
起始頁: 1756
結束頁: 1763
Appears in Collections:Articles