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dc.contributor.authorTsui, Bing-Yueen_US
dc.contributor.authorLee, Ya-Hsinen_US
dc.contributor.authorLee, Chen-Yien_US
dc.date.accessioned2020-10-05T01:59:47Z-
dc.date.available2020-10-05T01:59:47Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-020-08236-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/154916-
dc.description.abstractThe feasibility of reducing contact resistance by adding nano-textures on the contact surface is evaluated by three-dimensional simulation. Upward and downward pyramids and hemispheres are considered, and the effects of contact area and electric field are discussed. The downward nano-texture has a stronger electric field than the upward nano-texture; thus the increasing contact area will be more effectively used and lead to a greater improvement effect. On the other hand, the electric field of the hemisphere nano-texture is lower than that of the pyramid nano-texture. With proper design, the nano-textured contact can effectively reduce contact resistance up to 30-50%. Therefore, the proposed nano-textured contact is a promising approach with contact resistivity approaching physical limits.en_US
dc.language.isoen_USen_US
dc.subjectContact resistanceen_US
dc.subjectcontact resistivityen_US
dc.subjectcontact areaen_US
dc.subjectSchottky barrieren_US
dc.subjectnano-textureen_US
dc.titleReduction of Contact Resistivity by Nano-Textured Contacten_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-020-08236-1en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000541054700001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles