Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tsui, Bing-Yue | en_US |
| dc.contributor.author | Lee, Ya-Hsin | en_US |
| dc.contributor.author | Lee, Chen-Yi | en_US |
| dc.date.accessioned | 2020-10-05T01:59:47Z | - |
| dc.date.available | 2020-10-05T01:59:47Z | - |
| dc.date.issued | 1970-01-01 | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s11664-020-08236-1 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/154916 | - |
| dc.description.abstract | The feasibility of reducing contact resistance by adding nano-textures on the contact surface is evaluated by three-dimensional simulation. Upward and downward pyramids and hemispheres are considered, and the effects of contact area and electric field are discussed. The downward nano-texture has a stronger electric field than the upward nano-texture; thus the increasing contact area will be more effectively used and lead to a greater improvement effect. On the other hand, the electric field of the hemisphere nano-texture is lower than that of the pyramid nano-texture. With proper design, the nano-textured contact can effectively reduce contact resistance up to 30-50%. Therefore, the proposed nano-textured contact is a promising approach with contact resistivity approaching physical limits. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Contact resistance | en_US |
| dc.subject | contact resistivity | en_US |
| dc.subject | contact area | en_US |
| dc.subject | Schottky barrier | en_US |
| dc.subject | nano-texture | en_US |
| dc.title | Reduction of Contact Resistivity by Nano-Textured Contact | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1007/s11664-020-08236-1 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.epage | 0 | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:000541054700001 | en_US |
| dc.citation.woscount | 0 | en_US |
| Appears in Collections: | Articles | |

