標題: | Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments |
作者: | Lee, CC Lee, CP Yeh, MH Lee, WI Kuo, CT 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-七月-2003 |
摘要: | In this article, a scheme for fabricating low resistance Ohmic contacts to n-GaN was developed. This approach takes advantage of Ar plasma treatment and thermal annealing in forming gas ambient. As a result, the adjustment of Ar flow rate was very effective in improving the contact resistance. After proper Ar plasma treatment, the contact resistance and specific contact resistance of as-deposited Ohmic contacts were reduced to 0.362 Omega mm and 3.9 x 10(-5) Omega cm(2), respectively. Low contact resistance (0.103 Omega mm) and specific contact resistance (3.2 x 10(-6) Omega cm(2)) were obtained after annealing in N-2 gas ambient. By performing thermal annealing in forming gas ambient, even lower contact resistance (0.093 Omega mm) and specific contact resistance (2.6 x 10(-6) Omega cm(2)) were successfully achieved, indicating that the electrical characteristics of Ohmic contacts would not be affected by the effect of hydrogen passivation of dopants in n-GaN. (C) 2003 American Vacuum Society. |
URI: | http://hdl.handle.net/11536/27748 |
ISSN: | 1071-1023 |
期刊: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B |
Volume: | 21 |
Issue: | 4 |
起始頁: | 1501 |
結束頁: | 1504 |
顯示於類別: | 期刊論文 |