標題: Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments
作者: Lee, CC
Lee, CP
Yeh, MH
Lee, WI
Kuo, CT
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-2003
摘要: In this article, a scheme for fabricating low resistance Ohmic contacts to n-GaN was developed. This approach takes advantage of Ar plasma treatment and thermal annealing in forming gas ambient. As a result, the adjustment of Ar flow rate was very effective in improving the contact resistance. After proper Ar plasma treatment, the contact resistance and specific contact resistance of as-deposited Ohmic contacts were reduced to 0.362 Omega mm and 3.9 x 10(-5) Omega cm(2), respectively. Low contact resistance (0.103 Omega mm) and specific contact resistance (3.2 x 10(-6) Omega cm(2)) were obtained after annealing in N-2 gas ambient. By performing thermal annealing in forming gas ambient, even lower contact resistance (0.093 Omega mm) and specific contact resistance (2.6 x 10(-6) Omega cm(2)) were successfully achieved, indicating that the electrical characteristics of Ohmic contacts would not be affected by the effect of hydrogen passivation of dopants in n-GaN. (C) 2003 American Vacuum Society.
URI: http://hdl.handle.net/11536/27748
ISSN: 1071-1023
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 21
Issue: 4
起始頁: 1501
結束頁: 1504
顯示於類別:期刊論文


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