標題: Exploiting analogue OxRAM conductance modulation for contrast enhancement application
作者: Kumar, A.
Bezugam, S. S.
Hudec, B.
Hou, T. -H.
Suri, M.
電機學院
College of Electrical and Computer Engineering
關鍵字: image enhancement;random-access storage;low-contrast images;specific bi-layer OxRAM material stacks;light intensity;resistance encoding;nonvolatile OxRAM resistance states;contrast enhancement application;analogue oxide-based resistive memory device;sensor-level information storage;analogue OxRAM conductance modulation
公開日期: 11-Jun-2020
摘要: The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.
URI: http://dx.doi.org/10.1049/el.2020.0106
http://hdl.handle.net/11536/154917
ISSN: 0013-5194
DOI: 10.1049/el.2020.0106
期刊: ELECTRONICS LETTERS
Volume: 56
Issue: 12
起始頁: 594
結束頁: 596
Appears in Collections:Articles