標題: Large Photoresponsivity in the Amorphous-TiO2/SrRuO(3)Heterostructure
作者: Liu, Heng-Jui
Huang, Chin-Han
Chen, Cheng-Ying
Hsiao, Sheng-Wei
Chen, You-Sheng
Lee, Ming-Hao
Chen, Yu-Chen
Wu, Pin-Jiun
Chu, Ming-Wen
Lin, Jauyn Grace
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: hot carrier injection;photoresistors;photoresponsivity;TiO2;SrRuO(3)heterostructures;visible-light optoelectronics
公開日期: 1-Jan-1970
摘要: Thin-film heterostructures are effective in enhancing the performance or triggering novel physical phenomena of optoelectronic applications. For example, the epitaxial heterostructures of ultraviolet-light-sensitive TiO(2)with metallic SrRuO(3)can acquire visible-light functionalities using the hot carrier injection mechanism. Therefore, the TiO2/SrRuO(3)heterostructure system has recently attracted increasing interest. Herein, the amorphous-TiO2/SrRuO(3)heterostructure is fabricated and compared to the epitaxial TiO2/SrRuO3. As opposed to the occurrence of the visible-light photovoltaic effect in the epitaxial TiO2/SrRuO3, the amorphous-TiO2/SrRuO(3)heterostructure herein exhibits different optoelectronic functionality, specifically the photoresistor behavior. The amorphous-TiO2/SrRuO(3)heterostructure achieves a photoresponsivity of 6.56 A W(-1)at 1 V. Such a performance is hardly obtained in typical oxide-based photoresistors. The analyses of the crystalline and electronic structures show that it is due to the defect-induced high electron doping in the amorphous TiO(2)with hot carrier injection mechanism. This study discusses the correlation between the hot carrier injection and band diagram, which provides more degrees of freedom in designing potential optoelectronic devices.
URI: http://dx.doi.org/10.1002/pssr.202000273
http://hdl.handle.net/11536/154943
ISSN: 1862-6254
DOI: 10.1002/pssr.202000273
期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
起始頁: 0
結束頁: 0
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