完整後設資料紀錄
DC 欄位語言
dc.contributor.authorNidhi, Karunaen_US
dc.contributor.authorLee, Jian-Hsingen_US
dc.contributor.authorHuang, Shao-Changen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2020-10-05T01:59:50Z-
dc.date.available2020-10-05T01:59:50Z-
dc.date.issued2020-06-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2020.2985306en_US
dc.identifier.urihttp://hdl.handle.net/11536/154968-
dc.description.abstractThe fundamental model of energy transformation between the inductor and the power transistor for the unclamped inductive switching (UIS) test is inspected. Based on the experimental results, the energy stored in the inductor at the period of the channel turn-on can be dissipated by the power transistor after the channel is turned off. In this work, a new theoretical model to well describe the electrical and thermal behaviors of the power transistor during the unclamped inductive switching (UIS) test has been identified and analyzed with the experimental silicon results under different inductor values in 0.15 mu m BCD process. The total UIS energy reduced due to series resistance of the inductor and the power transistor has been theoretically explained and well matches with the experimental measured results on silicon.en_US
dc.language.isoen_USen_US
dc.subjectUnclamped inductive switching (UIS)en_US
dc.subjectavalanche breakdownen_US
dc.subjectpower transistoren_US
dc.subjectinductoren_US
dc.subjectseries resistanceen_US
dc.subjectsecond breakdownen_US
dc.titleEnergy Transformation Between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Testen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2020.2985306en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume20en_US
dc.citation.issue2en_US
dc.citation.spage413en_US
dc.citation.epage419en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000542969400023en_US
dc.citation.woscount0en_US
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