標題: Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement
作者: Nagarajan, Venkatesan
Chen, Kun-Ming
Chen, Bo-Yuan
Huang, Guo-Wei
Chuang, Chia-Wei
Lin, Chuang-Ju
Anandan, Deepak
Wu, Chai-Hsun
Han, Ping-Cheng
Singh, Sankalp Kumar
Tien-Tung Luong
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
關鍵字: HEMTs;MODFETs;Logic gates;Gallium nitride;Aluminum gallium nitride;Wide band gap semiconductors;Lighting;Charge trapping;GaN;high electron mobility transistor (HEMT);metal-insulator-semiconductor HEMT (MIS-HEMT);pulse measurement;ultraviolet (UV) illumination;photocurrent
公開日期: 1-Jun-2020
摘要: The charge trapping effects on AlGaN/GaN HEMTs under UV illumination are investigated using the pulsed current-voltage (I-V) measurement method. The test samples are unpassivated Schottky-gate HEMTs and metal-insulator-semiconductor HEMTs (MIS-HEMTs) with SiN gate dielectric. For HEMTs, the dominant charge trapping sources are the surface trap states, whereas, for MIS-HEMTs, they are trap states in the SiN gate dielectric and GaN buffer. When these devices are shined with the UV light, the drain current increases apparently in both samples owing to the generated photocurrent. By combining the UV illumination and pulsed I-V measurement, we find out the UV light has less effect on the surface charge trapping in the unpassivated HEMTs. Moreover, in MIS-HEMTs, we observe the charge trapping in the SiN gate dielectric becomes more serious under UV illumination, whereas the charge trapping in the GaN buffer is suppressed significantly. These findings are important for designing a GaN-based HEMT for photonic applications. In addition, the different responses of the surface-, buffer-, and gate-dielectric-related charge trapping to the UV light suggest that it would be easier to distinguish the trap types by introducing the UV illumination during the pulse measurement.
URI: http://dx.doi.org/10.1109/TDMR.2020.2987394
http://hdl.handle.net/11536/154970
ISSN: 1530-4388
DOI: 10.1109/TDMR.2020.2987394
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 20
Issue: 2
起始頁: 436
結束頁: 441
Appears in Collections:Articles