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dc.contributor.authorTsai, Kai-Anen_US
dc.contributor.authorHsieh, Ping-Yenen_US
dc.contributor.authorLai, Ting-Hsuanen_US
dc.contributor.authorTsao, Chun-Wenen_US
dc.contributor.authorPan, Huien_US
dc.contributor.authorLin, Yan-Guen_US
dc.contributor.authorHsu, Yung-Jungen_US
dc.date.accessioned2020-10-05T01:59:51Z-
dc.date.available2020-10-05T01:59:51Z-
dc.date.issued2020-06-22en_US
dc.identifier.issn2574-0962en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsaem.0c00335en_US
dc.identifier.urihttp://hdl.handle.net/11536/154990-
dc.description.abstractWe synthesized nitrogen (N)-doped graphene quantum dots (N-GQDs) using a top-down hydrothermal cutting approach. The concentration of N dopants was readily controlled by adjusting the concentration of the N source of urea. When N dopants were incorporated into GQDs, visible absorption was induced by C-N bonds, which created another pathway for generating photoluminescence (PL). Time-resolved PL data revealed that the carrier lifetime of GQDs was increased upon doping with the optimized N concentration. The photoelectrochemical properties of N-GQDs toward water splitting were studied, and the results showed that 2N-GQDs prepared with 2 g of urea produced the highest photocurrent. The photocatalytic activity of 2N-GQDs powder photocatalyst for hydrogen production was also examined under AM 1.5G illumination, showing substantial enhancement over that of pristine GQDs. Electrochemical impedance spectroscopy data further revealed a significant improvement in charge dynamics and reaction kinetics and an increased carrier concentration as a result of N doping.en_US
dc.language.isoen_USen_US
dc.subjectgraphene quantum dotsen_US
dc.subjectnitrogen-dopeden_US
dc.subjectwater splittingen_US
dc.subjectsolar hydrogen productionen_US
dc.subjectcharge dynamicsen_US
dc.titleNitrogen-Doped Graphene Quantum Dots for Remarkable Solar Hydrogen Productionen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsaem.0c00335en_US
dc.identifier.journalACS APPLIED ENERGY MATERIALSen_US
dc.citation.volume3en_US
dc.citation.issue6en_US
dc.citation.spage5322en_US
dc.citation.epage5332en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000543715100028en_US
dc.citation.woscount2en_US
Appears in Collections:Articles