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dc.contributor.authorChu, Chunshuangen_US
dc.contributor.authorTian, Kangkaien_US
dc.contributor.authorChe, Jiamangen_US
dc.contributor.authorShao, Huaen_US
dc.contributor.authorKou, Jianquanen_US
dc.contributor.authorZhang, Yonghuien_US
dc.contributor.authorZhang, Zi-Huien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2020-10-05T01:59:51Z-
dc.date.available2020-10-05T01:59:51Z-
dc.date.issued2020-06-01en_US
dc.identifier.issn1943-0655en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JPHOT.2020.2997343en_US
dc.identifier.urihttp://hdl.handle.net/11536/154993-
dc.description.abstractIn this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work. The electron leakage arises from the unbalanced electron and hole injection efficiencies. The correlation between the efficiency droop and the electron leakage can be numerically calculated by manipulating the conduction band barrier height of the p-AlGaN electron blocking layer (p-EBL) for the proposed DUV LEDs. For the purpose of demonstrating that the efficiency droop for DUV LEDs can be experimentally decreased by reducing the electron leakage, a p(+)-GaN/In0.15Ga0.85N/n(+)-GaN tunnel junction on DUV LED is grown by using metal organic chemical vapor deposition (MOCVD) technology. The tunnel junction helps to enhance the hole injection, thus decreasing the electron leakage and the efficiency droop. Moreover, the parasitic emission in the p-type hole injection layer is no longer observed thanks to the decreased electron leakage level.en_US
dc.language.isoen_USen_US
dc.subjectDUV LEDen_US
dc.subjectefficiency droopen_US
dc.subjectelectron leakageen_US
dc.subjectAuger recombinationen_US
dc.titleOn the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JPHOT.2020.2997343en_US
dc.identifier.journalIEEE PHOTONICS JOURNALen_US
dc.citation.volume12en_US
dc.citation.issue3en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000543715300007en_US
dc.citation.woscount0en_US
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