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dc.contributor.authorChen, Yan-Syunen_US
dc.contributor.authorLi, Li-Yuen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorMeng, HsinFeien_US
dc.contributor.authorHorng, Sheng-fuen_US
dc.date.accessioned2020-10-05T02:00:31Z-
dc.date.available2020-10-05T02:00:31Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-0494-2en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/155046-
dc.description.abstractwe investigate the potential and stability of perovskite(MaPbI3) as the hole-selective contact materials for silicon solar cells because perovskite has excellent carrier transport properties for both electrons and holes. We have overcome the problem of forming a continuous perovskite thin film on silicon due to low surface energy by engineering the silicon surface roughness and native oxide. As a result, the short-circuit current density (Jsc) of the device with the perovskite layer increases by 0.6mA/cm2 from 27.73 to 28.32 mA/cm2 and the open-circuit voltage (Voc) increases by 5mV from 517.36 to 512.50 mV, reaching a power conversion efficiency of 10.53%. The solar cell with the perovskite(MaPbI3) hole selective layer exhibits better performance than the reference counterpart. Future work will be focused on tuning the composition of the PbBr2 and Pb12 to modify the work function and enlarge the hole selectivity.en_US
dc.language.isoen_USen_US
dc.subjectPerovskite hybrid solar cellen_US
dc.subjectphotovoltaic cellsen_US
dc.subjectsiliconen_US
dc.titleEvaluation of Perovskite Hole Selective Contacts for Silicon Solar Cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)en_US
dc.citation.spage2675en_US
dc.citation.epage2678en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000542034902117en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper