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dc.contributor.authorMadhaiyan, Govindasamyen_US
dc.contributor.authorTung, Ting-Weien_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorLu, Chia-Jungen_US
dc.contributor.authorAnsari, Arshiyaen_US
dc.contributor.authorChuang, Wei-Tsungen_US
dc.contributor.authorLin, Hong-Cheuen_US
dc.date.accessioned2020-10-05T02:01:05Z-
dc.date.available2020-10-05T02:01:05Z-
dc.date.issued2020-10-01en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.snb.2020.128392en_US
dc.identifier.urihttp://hdl.handle.net/11536/155116-
dc.description.abstractIn this work, we successfully proposed an organic semiconductor gas sensor on vertical channel design to exhibit an ultra-sensitive response to nitric oxide gas (10 ppb) at room temperature. The effect of ultra-violet (UV) irradiation (lambda =365 nm) on sensing performance of solution processed vertical organic diode (VOD) has been investigated. After implementing a simple and low-cost UV treatment, the sensing response of PBDTTT-C-T based NO sensor is significantly enhanced from 93 % to 233 % at 1 ppm. In addition, we also introduced a new strategy to tune the selectivity of organic gas sensors by using photochromic molecule and organic semiconductor blends. With the 1 Wt% spiropyran dopant, the sensor response to ammonia can be considerably suppressed, hence the response ratio between NO and ammonia can be improved from 2.9 to 16.0, indicating an improved selectivity. The proposed ultrasensitive and selective NO gas sensor have great potential for exhaled breath detection (asthma patients) and environmental monitoring.en_US
dc.language.isoen_USen_US
dc.subjectOrganic semiconductoren_US
dc.subjectNitric oxide gas sensoren_US
dc.subjectUV treatmenten_US
dc.subjectPhotochromic moleculesen_US
dc.titleUV-enhanced room-temperature ultrasensitive NO gas sensor with vertical channel nano-porous organic diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.snb.2020.128392en_US
dc.identifier.journalSENSORS AND ACTUATORS B-CHEMICALen_US
dc.citation.volume320en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000558702600006en_US
dc.citation.woscount0en_US
Appears in Collections:Articles