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dc.contributor.authorLin, C. -Y.en_US
dc.contributor.authorChen, P. -H.en_US
dc.contributor.authorChang, T. -C.en_US
dc.contributor.authorHuang, W. -C.en_US
dc.contributor.authorTan, Y. -F.en_US
dc.contributor.authorLin, Y. -H.en_US
dc.contributor.authorChen, W. -C.en_US
dc.contributor.authorLin, C. -C.en_US
dc.contributor.authorChang, Y. -F.en_US
dc.contributor.authorChen, Y. -C.en_US
dc.contributor.authorHuang, H. -C.en_US
dc.contributor.authorMa, X. -H.en_US
dc.contributor.authorHao, Y.en_US
dc.contributor.authorSze, S. M.en_US
dc.date.accessioned2020-10-05T02:01:06Z-
dc.date.available2020-10-05T02:01:06Z-
dc.date.issued2020-06-01en_US
dc.identifier.issn2542-5293en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mtphys.2020.100201en_US
dc.identifier.urihttp://hdl.handle.net/11536/155131-
dc.description.abstractIn this research, we investigated the conduction mechanism in metal-insulator transition (MIT) materials. Among these MIT materials (NbOx, NiOx, VOx, and TaS2), vanadium oxide-based selectors have been widely investigated because of their high switching speed (similar to 10-ns transition time), sufficient nonlinearity (>10(3)), and endurance stability (similar to 10(10)). Abnormal temperature-dependent degradation in the high resistive state was observed, as was studied in detail by a current fitting analysis and explored theoretically by electric (E-MIT) and thermal (T-MIT) modeling. The results suggest the existence of a MIT region located between the electrode and the localized filament. To improve the localized transition efficiency, we propose an enhanced-type MIT architecture to bypass the E-MIT and T-MIT universal rule with the novel structure of vanadium top electrode device. As compared with a vanadium oxide middle-layer device, the electrical transition efficiency is improved 2-fold as evidenced by thermal cycling material analysis, as well as boosting endurance reliability to 10(7) at 65 degrees C. Finally, for the first time, a potential neuromorphic computing application featuring a damping oscillator has been demonstrated in this enhanced-type MIT architecture, with a high damping ratio with 10-fold smaller area and 5-fold smaller energy than complementary metal-oxide-semiconductor (CMOS) devices. This presents a promising milestone for ultralow power neuromorphic system design and solutions in the near future. (C) 2020 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSelectoren_US
dc.subjectVanadium oxideen_US
dc.subjectThreshold switchingen_US
dc.subjectElectrodeen_US
dc.subjectSchottky thermal emissionen_US
dc.subjectMetal-insulator transitionen_US
dc.titleA comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mtphys.2020.100201en_US
dc.identifier.journalMATERIALS TODAY PHYSICSen_US
dc.citation.volume13en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000550226300008en_US
dc.citation.woscount0en_US
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