標題: A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector
作者: Lin, Chih-Yang
Chen, Ying-Chen
Gu, Meiqi
Pan, Chih-Hung
Jin, Fu-Yuan
Tseng, Yi-Ting
Hsieh, Cheng Chih
Wu, Xiaohan
Chen, Min-Chen
Chang, Yao-Feng
Zhou, Fei
Fowler, Burt
Chang, Kuan-Chang
Tsai, Tsung-Ming
Chang, Ting-Chang
Zhao, Yonggang
Sze, Simon M.
Banetjee, Sanjay
Lee, Jack C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: VOx;Selector;and Threshold Switching
公開日期: 1-一月-2017
摘要: For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling ("seasoning effect"). Compatible current density (10(7)similar to 10(9) A/cm(2)) and selectivity (similar to 100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications.
URI: http://hdl.handle.net/11536/146760
ISSN: 1930-8868
期刊: 2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
顯示於類別:會議論文