標題: | A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices |
作者: | Lin, C. -Y. Chen, P. -H. Chang, T. -C. Huang, W. -C. Tan, Y. -F. Lin, Y. -H. Chen, W. -C. Lin, C. -C. Chang, Y. -F. Chen, Y. -C. Huang, H. -C. Ma, X. -H. Hao, Y. Sze, S. M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Selector;Vanadium oxide;Threshold switching;Electrode;Schottky thermal emission;Metal-insulator transition |
公開日期: | 1-六月-2020 |
摘要: | In this research, we investigated the conduction mechanism in metal-insulator transition (MIT) materials. Among these MIT materials (NbOx, NiOx, VOx, and TaS2), vanadium oxide-based selectors have been widely investigated because of their high switching speed (similar to 10-ns transition time), sufficient nonlinearity (>10(3)), and endurance stability (similar to 10(10)). Abnormal temperature-dependent degradation in the high resistive state was observed, as was studied in detail by a current fitting analysis and explored theoretically by electric (E-MIT) and thermal (T-MIT) modeling. The results suggest the existence of a MIT region located between the electrode and the localized filament. To improve the localized transition efficiency, we propose an enhanced-type MIT architecture to bypass the E-MIT and T-MIT universal rule with the novel structure of vanadium top electrode device. As compared with a vanadium oxide middle-layer device, the electrical transition efficiency is improved 2-fold as evidenced by thermal cycling material analysis, as well as boosting endurance reliability to 10(7) at 65 degrees C. Finally, for the first time, a potential neuromorphic computing application featuring a damping oscillator has been demonstrated in this enhanced-type MIT architecture, with a high damping ratio with 10-fold smaller area and 5-fold smaller energy than complementary metal-oxide-semiconductor (CMOS) devices. This presents a promising milestone for ultralow power neuromorphic system design and solutions in the near future. (C) 2020 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.mtphys.2020.100201 http://hdl.handle.net/11536/155131 |
ISSN: | 2542-5293 |
DOI: | 10.1016/j.mtphys.2020.100201 |
期刊: | MATERIALS TODAY PHYSICS |
Volume: | 13 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |