標題: | A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector |
作者: | Lin, Chih-Yang Chen, Ying-Chen Gu, Meiqi Pan, Chih-Hung Jin, Fu-Yuan Tseng, Yi-Ting Hsieh, Cheng Chih Wu, Xiaohan Chen, Min-Chen Chang, Yao-Feng Zhou, Fei Fowler, Burt Chang, Kuan-Chang Tsai, Tsung-Ming Chang, Ting-Chang Zhao, Yonggang Sze, Simon M. Banetjee, Sanjay Lee, Jack C. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | VOx;Selector;and Threshold Switching |
公開日期: | 1-Jan-2017 |
摘要: | For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling ("seasoning effect"). Compatible current density (10(7)similar to 10(9) A/cm(2)) and selectivity (similar to 100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications. |
URI: | http://hdl.handle.net/11536/146760 |
ISSN: | 1930-8868 |
期刊: | 2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) |
Appears in Collections: | Conferences Paper |